GaAs-substrate-based long-wave active materials with type-II band alignments

a new type-ii fuzzy logic based controller for non-linear dynamical systems with application to 3-psp parallel robot

abstract type-ii fuzzy logic has shown its superiority over traditional fuzzy logic when dealing with uncertainty. type-ii fuzzy logic controllers are however newer and more promising approaches that have been recently applied to various fields due to their significant contribution especially when the noise (as an important instance of uncertainty) emerges. during the design of type- i fuz...

Hybrid Type-I InAs/GaAs and Type-II GaSb/GaAs Quantum Dot Structure with Enhanced Photoluminescence

Band Alignments in InxGa1±xP/GaAs Heterostructures Investigated by Pressure Experiments

InxGa1± xP/GaAs (x ˆ 0.541 and 0.427) heterostructures, grown by Atomic Layer Molecular Beam Epitaxy (ALMBE) on low temperature substrates, have been characterised by pressure-dependent and time-resolved photoluminescence experiments. The excitonic optical transitions and recombination dynamics are both influenced by the particular band alignments of these systems. The valence band offset has b...

InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band

Articles you may be interested in Structural and optical properties of self-assembled InAs quantum dot molecules on GaAs substrates Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μ m band Appl.

Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

T. Xu, M. J. Wei, P. Capiod, A. D ıaz Alvarez, X. L. Han, D. Troadec, J. P. Nys, M. Berthe, I. Lefebvre, G. Patriarche, S. R. Plissard, P. Caroff, Ph. Ebert, and B. Grandidier Institut d’Electronique, de Micro electronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, D epartement ISEN, 41 bd Vauban, 59046 Lille Cedex, France Key Laboratory of Advanced Display and System Application, Shanghai ...